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UF3C120150B7S Tech Specifications

UnitedSiC  UF3C120150B7S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package D2PAK-7
Mfr UnitedSiC
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Power Dissipation (Max) 136W (Tc)
Vds - Drain-Source Breakdown Voltage 1.2 kV
Moisture Sensitive Yes
Typical Turn-On Delay Time 32 ns
Vgs th - Gate-Source Threshold Voltage 4.4 V
Pd - Power Dissipation 136 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 25 V, + 25 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 800
Mounting Styles Through Hole
Channel Mode Enhancement
Manufacturer UnitedSiC
Brand UnitedSiC
Qg - Gate Charge 25.7 nC
Tradename SiC FET
Rds On - Drain-Source Resistance 150 mOhms
RoHS Details
Typical Turn-Off Delay Time 32 ns
Id - Continuous Drain Current 17 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180mOhm @ 5A, 12V
Vgs(th) (Max) @ Id 5.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 738 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 25.7 nC @ 12 V
Rise Time 6 ns
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±25V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature Super Junction
Product Category MOSFET
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