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UF3C120080B7S Tech Specifications

UnitedSiC  UF3C120080B7S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package D2PAK-7
Mfr UnitedSiC
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 28.8A (Tc)
Power Dissipation (Max) 190W (Tc)
Base Product Number UF3C120080
Vds - Drain-Source Breakdown Voltage 1.2 kV
Moisture Sensitive Yes
Id - Continuous Drain Current 28.8 A
Typical Turn-Off Delay Time 30 ns
RoHS Details
Rds On - Drain-Source Resistance 85 mOhms
Tradename SiC FET
Qg - Gate Charge 23 nC
Brand UnitedSiC
Manufacturer UnitedSiC
Channel Mode Enhancement
Mounting Styles Through Hole
Factory Pack QuantityFactory Pack Quantity 800
Minimum Operating Temperature - 55 C
Vgs - Gate-Source Voltage - 25 V, + 25 V
Maximum Operating Temperature + 175 C
Transistor Polarity N-Channel
Pd - Power Dissipation 190 W
Vgs th - Gate-Source Threshold Voltage 6 V
Typical Turn-On Delay Time 31 ns, 33 ns
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 754 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 12 V
Rise Time 7 ns, 6 ns
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±25V
Product Type MOSFET
FET Feature -
Product Category MOSFET
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