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BDS20 Tech Specifications

TT Electronics  BDS20 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO220M-3
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 35 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 1000 at 0.5 A, 3 V
Collector-Emitter Saturation Voltage 4 V
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 8 MHz
Collector- Emitter Voltage VCEO Max 80 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 80 V
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