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2N2907ACSM-QR-EB Tech Specifications

TT Electronics  2N2907ACSM-QR-EB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO-18-3
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 400 mW
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V
Collector-Emitter Saturation Voltage 1.6 V
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 200 MHz
Collector- Emitter Voltage VCEO Max 60 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 60 V
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