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2N2907A Tech Specifications
TT Electronics 2N2907A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | TO-18-3 | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 400 mW | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 100 at 150 mA, 10 V | |
| Collector-Emitter Saturation Voltage | 1.6 V | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Through Hole | |
| Gain Bandwidth Product fT | 200 MHz | |
| Maximum DC Collector Current | 600 mA | |
| Collector- Emitter Voltage VCEO Max | 60 V | |
| Technology | Si | |
| Configuration | Single | |
| Collector Base Voltage (VCBO) | 60 V |
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