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TTA006B,Q Tech Specifications
Toshiba TTA006B,Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Supplier Device Package | TO-126N | |
| Mfr | Toshiba Semiconductor and Storage | |
| Package | Tray | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 1 A | |
| Emitter- Base Voltage VEBO | 5 V | |
| Pd - Power Dissipation | 1.5 W | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | + 150 C | |
| DC Collector/Base Gain hfe Min | 100 | |
| Collector-Emitter Saturation Voltage | 1.5 V | |
| Unit Weight | 0.029630 oz | |
| Minimum Operating Temperature | - | |
| Factory Pack QuantityFactory Pack Quantity | 250 | |
| Mounting Styles | Through Hole | |
| Gain Bandwidth Product fT | 70 MHz | |
| Manufacturer | Toshiba | |
| Brand | Toshiba | |
| Maximum DC Collector Current | 2 A | |
| DC Current Gain hFE Max | 320 | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 230 V | |
| Series | - | |
| Operating Temperature | 150°C (TJ) | |
| Packaging | Tray | |
| Subcategory | Transistors | |
| Technology | Si | |
| Configuration | Single | |
| Power - Max | 1.5 W | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V | |
| Current - Collector Cutoff (Max) | 200nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 230 V | |
| Frequency - Transition | 70MHz | |
| Collector Base Voltage (VCBO) | 230 V | |
| Continuous Collector Current | - 1 A | |
| Product Category | Bipolar Transistors - BJT |
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