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TLP620-4(GB,F) Tech Specifications

Toshiba  TLP620-4(GB,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 16-DIP (0.300, 7.62mm)
Number of Pins 16Pins
Collector-Emitter Saturation Voltage 400mV
Current Transfer Ratio-Min 100% @ 5mA
Number of Elements 4 Elements
Operating Temperature -55°C~100°C
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Voltage - Isolation 5000Vrms
Output Voltage 55V
Output Type Transistor
Voltage 55V
Power Dissipation 150mW
Voltage - Forward (Vf) (Typ) 1.15V
Input Type AC, DC
Forward Current 50mA
Max Output Voltage 55V
Output Current per Channel 50mA
Rise Time 2μs
Fall Time (Typ) 3 μs
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 50mA
Rise / Fall Time (Typ) 2μs 3μs
Max Input Current 50mA
Current Transfer Ratio (Max) 600% @ 5mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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TLP620-4(GB,F) Documents

Download datasheets and manufacturer documentation for   TLP620-4(GB,F)

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