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TLP291(GB-TP,E) Tech Specifications

Toshiba  TLP291(GB-TP,E) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SOIC (0.179, 4.55mm Width)
Number of Pins 4Pins
Collector-Emitter Saturation Voltage 300mV
Current Transfer Ratio-Min 100% @ 5mA
Number of Elements 1 Element
Operating Temperature -55°C~110°C
Packaging Tape & Reel (TR)
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED
Max Power Dissipation 200mW
Voltage - Isolation 3750Vrms
Output Type Transistor
Configuration SINGLE
Number of Channels 1Channel
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Forward Current 50mA
Max Output Voltage 80V
Output Current per Channel 50mA
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 50mA
Rise / Fall Time (Typ) 4μs 7μs
Reverse Breakdown Voltage 5V
Max Input Current 50mA
Current Transfer Ratio (Max) 400% @ 5mA
Turn On / Turn Off Time (Typ) 7μs, 7μs
Dark Current-Max 80nA
Radiation Hardening No
RoHS Status RoHS Compliant
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TLP291(GB-TP,E) Documents

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