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RN4606(TE85L,F) Tech Specifications

Toshiba  RN4606(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 80
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Polarity NPN, PNP
Element Configuration Dual
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Max Breakdown Voltage 50V
Frequency - Transition 200MHz 250MHz
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 4.7k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47k Ω
RoHS Status RoHS Compliant
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