- All Products
- Discrete Semiconductor Products
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN2906,LF
In Stock Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
RN2906,LF Tech Specifications
Toshiba RN2906,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Supplier Device Package | US6 | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Current-Collector (Ic) (Max) | 100mA | |
| hFEMin | 80 | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 200mW | |
| Polarity | PNP | |
| Power - Max | 200mW | |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 200MHz | |
| Collector Base Voltage (VCBO) | -50V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Resistor - Base (R1) | 4.7kOhms | |
| Continuous Collector Current | -100mA | |
| Resistor - Emitter Base (R2) | 47kOhms | |
| Height | 900μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | RoHS Compliant |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ



