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RN2602(TE85L,F) Tech Specifications

Toshiba  RN2602(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Collector-Emitter Breakdown Voltage 50V
Packaging Tape & Reel (TR)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Power - Max 300mW
Transistor Type 2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status RoHS Compliant
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RN2602(TE85L,F) Documents

Download datasheets and manufacturer documentation for   RN2602(TE85L,F)

RN2602(TE85L,F) brand manufacturers: Toshiba Semiconductor and Storage, Twicea stock, RN2602(TE85L,F) reference price.Toshiba Semiconductor and Storage. RN2602(TE85L,F) parameters, RN2602(TE85L,F) Datasheet PDF and pin diagram description download.You can use the RN2602(TE85L,F) Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find RN2602(TE85L,F) pin diagram and circuit diagram and usage method of function,RN2602(TE85L,F) electronics tutorials.You can download from the Twicea.