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RN1313,LF Tech Specifications

Toshiba  RN1313,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package USM
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 100 mA
Transistor Polarity NPN
Qualification AEC-Q101
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 150 mW
Maximum Operating Temperature + 125 C
DC Collector/Base Gain hfe Min 120
Unit Weight 0.000212 oz
Typical Input Resistor 47 kOhms
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Peak DC Collector Current 100 mA
Channel Mode Enhancement
Manufacturer Toshiba
Brand Toshiba
Maximum DC Collector Current 100 mA
Maximum Operating Frequency 250 MHz
RoHS Details
Collector- Emitter Voltage VCEO Max 50 V
Series Automotive, AEC-Q101
Packaging Cut Tape
Subcategory Transistors
Configuration Single
Power - Max 100 mW
Product Type BJTs - Bipolar Transistors - Pre-Biased
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Frequency - Transition 250 MHz
Resistor - Base (R1) 47 kOhms
Continuous Collector Current 100
Product Category Bipolar Transistors - Pre-Biased
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