Toshiba Semiconductor and Storage RFM01U7P(TE12L,F) RF MOSFETs Transistors 1.2W 10.8dB 520MHz
RFM01U7P(TE12L,F)
2541-368-RFM01U7P(TE12L,F)
TO-243AA
RoHS Compliant
Power - Output: 1.2W,Gain: 10.8dB,Frequency: 520MHz
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RFM01U7P(TE12L,F) Tech Specifications
Toshiba RFM01U7P(TE12L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | TO-243AA | |
| Surface Mount | YES | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 3W | |
| Reach Compliance Code | unknown | |
| Current Rating | 1A | |
| Frequency | 520MHz | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Current - Test | 100mA | |
| Drain to Source Voltage (Vdss) | 20V | |
| Transistor Type | N-Channel | |
| Continuous Drain Current (ID) | 1A | |
| Gate to Source Voltage (Vgs) | 10V | |
| Gain | 10.8dB | |
| Drain Current-Max (Abs) (ID) | 1A | |
| Power - Output | 1.2W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 7.2V | |
| RoHS Status | RoHS Compliant |
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