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HN1C01FE-Y,LXHF Tech Specifications

Toshiba  HN1C01FE-Y,LXHF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Supplier Device Package ES6
Current-Collector (Ic) (Max) 150mA
Product Status Active
Mfr Toshiba Semiconductor and Storage
Qualification AEC-Q200
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 100 mW
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 120 at 2 mA, 6 V
Collector-Emitter Saturation Voltage 100 mV
Factory Pack QuantityFactory Pack Quantity 4000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 80 MHz
Part # Aliases HN1C01FE-Y,LXHF(B
Manufacturer Toshiba
Brand Toshiba
DC Current Gain hFE Max 400 at 2 mA, 6 V
RoHS Details
Collector- Emitter Voltage VCEO Max 50 V
Operating Temperature 150°C (TJ)
Series Automotive, AEC-Q101
Packaging MouseReel
Subcategory Transistors
Technology Si
Configuration Single
Power - Max 100mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 60 V
Continuous Collector Current 150 mA
Product Category Bipolar Transistors - BJT
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