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HN1A01FU-GR,LF Tech Specifications

Toshiba  HN1A01FU-GR,LF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Collector-Emitter Breakdown Voltage 50V
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Reach Compliance Code unknown
Power - Max 200mW
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
RoHS Status RoHS Compliant
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HN1A01FU-GR,LF brand manufacturers: Toshiba Semiconductor and Storage, Twicea stock, HN1A01FU-GR,LF reference price.Toshiba Semiconductor and Storage. HN1A01FU-GR,LF parameters, HN1A01FU-GR,LF Datasheet PDF and pin diagram description download.You can use the HN1A01FU-GR,LF Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find HN1A01FU-GR,LF pin diagram and circuit diagram and usage method of function,HN1A01FU-GR,LF electronics tutorials.You can download from the Twicea.