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HN1A01FE-Y,LXHF Tech Specifications

Toshiba  HN1A01FE-Y,LXHF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current-Collector (Ic) (Max) 150mA
Qualification AEC-Q200
Collector- Emitter Voltage VCEO Max 50 V
RoHS Details
DC Current Gain hFE Max 400 at -2 mA, - 6 V
Brand Toshiba
Manufacturer Toshiba
Part # Aliases HN1A01FE-Y,LXHF(B
Gain Bandwidth Product fT 80 MHz
Mounting Styles SMD/SMT
Factory Pack QuantityFactory Pack Quantity 4000
Collector-Emitter Saturation Voltage 100 mV
DC Collector/Base Gain hfe Min 120 at -2 mA, - 6 V
Maximum Operating Temperature + 150 C
Transistor Polarity PNP
Pd - Power Dissipation 100 mW
Emitter- Base Voltage VEBO 5 V
Series Automotive, AEC-Q101
Operating Temperature 150°C (TJ)
Packaging MouseReel
Subcategory Transistors
Technology Si
Configuration Dual
Power - Max 100mW
Product Type BJTs - Bipolar Transistors
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 50 V
Continuous Collector Current 150 mA
Product Category Bipolar Transistors - BJT
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