Toshiba Semiconductor and Storage 3SK292(TE85R,F) RF MOSFETs Transistors 26dB 500MHz
3SK292(TE85R,F)
2541-368-3SK292(TE85R,F)
SC-61AA
RoHS Compliant
Gain: 26dB,Frequency: 500MHz
In Stock Min. : 1
Mult. : 1
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3SK292(TE85R,F) Tech Specifications
Toshiba 3SK292(TE85R,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 52 Weeks | |
| Package / Case | SC-61AA | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 150mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | 30mA | |
| Frequency | 500MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Element Configuration | Single | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Current - Test | 10mA | |
| Transistor Application | AMPLIFIER | |
| Drain to Source Voltage (Vdss) | 12.5V | |
| Transistor Type | N-Channel Dual Gate | |
| Continuous Drain Current (ID) | 30mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Gain | 26dB | |
| Drain Current-Max (Abs) (ID) | 0.03A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | 1.4dB | |
| Voltage - Test | 6V | |
| RoHS Status | RoHS Compliant |
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