Toshiba Semiconductor and Storage 2SK3075(TE12L,Q) RF MOSFETs Transistors 520MHz 11.7dB
2SK3075(TE12L,Q)
2541-368-2SK3075(TE12L,Q)
TO-271AA
RoHS Compliant
Frequency: 520MHz,Gain: 11.7dB
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2SK3075(TE12L,Q) Tech Specifications
Toshiba 2SK3075(TE12L,Q) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Package / Case | TO-271AA | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -45°C | |
| Max Power Dissipation | 20W | |
| Reach Compliance Code | unknown | |
| Current Rating | 5A | |
| Frequency | 520MHz | |
| Current - Test | 50mA | |
| Drain to Source Voltage (Vdss) | 30V | |
| Transistor Type | N-Channel | |
| Continuous Drain Current (ID) | 5A | |
| Gate to Source Voltage (Vgs) | 25V | |
| Gain | 11.7dB | |
| Max Output Power | 7.5W | |
| Voltage - Test | 9.6V | |
| RoHS Status | RoHS Compliant |
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