Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F) RF MOSFETs Transistors 1kHz
2SK209-GR(TE85L,F)
2541-368-2SK209-GR(TE85L,F)
TO-236-3, SC-59, SOT-23-3
RoHS Compliant
Frequency: 1kHz
In Stock
:
732000 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2SK209-GR(TE85L,F) Tech Specifications
Toshiba 2SK209-GR(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 52 Weeks | |
| Contact Plating | Copper, Silver, Tin | |
| Mount | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 150mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Frequency | 1kHz | |
| Element Configuration | Single | |
| Operating Mode | DEPLETION MODE | |
| Current - Test | 500μA | |
| Transistor Application | AMPLIFIER | |
| Transistor Type | N-Channel JFET | |
| Continuous Drain Current (ID) | 6.5mA | |
| Gate to Source Voltage (Vgs) | -1.5V | |
| FET Technology | JUNCTION | |
| Noise Figure | 1dB | |
| Voltage - Test | 10V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ