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2SA2061(TE85L,F) Tech Specifications

Toshiba  2SA2061(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Supplier Device Package TSM
Mfr Toshiba Semiconductor and Storage
Product Status Active
Current-Collector (Ic) (Max) 2.5 A
Emitter- Base Voltage VEBO 7 V
Pd - Power Dissipation 625 mW
Transistor Polarity PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 200
Collector-Emitter Saturation Voltage 1.1 V
Unit Weight 0.000353 oz
Minimum Operating Temperature -
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Gain Bandwidth Product fT -
Manufacturer Toshiba
Brand Toshiba
Maximum DC Collector Current 2.5 A
DC Current Gain hFE Max 500
RoHS Details
Collector- Emitter Voltage VCEO Max 20 V
Risk Rank 5.57
Ihs Manufacturer TOSHIBA CORP
Part Life Cycle Code Active
Manufacturer Part Number 2SA2061(TE85L,F)
Rohs Code Yes
Operating Temperature-Max 150 °C
Package Description ,
Series -
Operating Temperature 150°C (TJ)
Packaging MouseReel
Subcategory Transistors
Reach Compliance Code unknown
Configuration Single
Power - Max 625 mW
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 190mV @ 53mA, 1.6A
Voltage - Collector Emitter Breakdown (Max) 20 V
Frequency - Transition -
Collector Base Voltage (VCBO) 20 V
Power Dissipation-Max (Abs) 1 W
Collector Current-Max (IC) 2.5 A
DC Current Gain-Min (hFE) 200
Continuous Collector Current - 2.5 A
Product Category Bipolar Transistors - BJT
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