Toshiba Semiconductor and Storage 2SA1873-Y(TE85L,F) Arrays BJT Transistors 150mA 300mV
2SA1873-Y(TE85L,F)
2541-362-2SA1873-Y(TE85L,F)
5-TSSOP, SC-70-5, SOT-353
RoHS Compliant
Max Collector Current: 150mA,Collector Emitter Voltage (VCEO): 300mV,Gain Bandwidth Product: 80MHz
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2SA1873-Y(TE85L,F) Tech Specifications
Toshiba 2SA1873-Y(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Factory Lead Time | 12 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 | |
| Collector-Emitter Breakdown Voltage | 50V | |
| hFEMin | 120 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 200mW | |
| Reach Compliance Code | unknown | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power - Max | 200mW | |
| Gain Bandwidth Product | 80MHz | |
| Transistor Type | 2 PNP (Dual) Matched Pair, Common Emitter | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 150mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
| Transition Frequency | 80MHz | |
| Max Breakdown Voltage | 50V | |
| Collector Base Voltage (VCBO) | -50V | |
| Emitter Base Voltage (VEBO) | -5V | |
| RoHS Status | RoHS Compliant |
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