Toshiba Semiconductor and Storage 2SA1618-GR(TE85L,F Arrays BJT Transistors 300mV 150mA
2SA1618-GR(TE85L,F
2541-362-2SA1618-GR(TE85L,F
SC-74A, SOT-753
RoHS Compliant
Gain Bandwidth Product: 80MHz,Collector Emitter Voltage (VCEO): 300mV,Max Collector Current: 150mA
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2SA1618-GR(TE85L,F Tech Specifications
Toshiba 2SA1618-GR(TE85L,F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-74A, SOT-753 | |
| Collector-Emitter Breakdown Voltage | 50V | |
| hFEMin | 200 | |
| Operating Temperature | 125°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2014 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 300mW | |
| Polarity | PNP | |
| Element Configuration | Dual | |
| Power - Max | 300mW | |
| Gain Bandwidth Product | 80MHz | |
| Transistor Type | 2 PNP (Dual) Matched Pair, Common Emitter | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 150mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA | |
| Transition Frequency | 80MHz | |
| Max Breakdown Voltage | 50V | |
| Collector Base Voltage (VCBO) | -50V | |
| Emitter Base Voltage (VEBO) | -5V | |
| RoHS Status | RoHS Compliant |
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