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TK62N60W Tech Specifications

Toshiba  TK62N60W technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount NO
Contact plating gold-plated
Number of pins 10pins
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Drain Current-Max (ID) 61.8 A
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Type of connector pin strips
Connector socket
Kind of connector female
Spatial orientation straight
Contacts pitch 2.54mm
Electrical mounting THT
Connector pinout layout 2x5
Row pitch 2.54mm
Gross weight 0.92 g
Operating temperature -40...163°C
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current rating 1.5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247
Drain-source On Resistance-Max 0.04 Ω
Pulsed Drain Current-Max (IDM) 247 A
DS Breakdown Voltage-Min 600 V
Avalanche Energy Rating (Eas) 698 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 400 W
Rated voltage 60V
Profile beryllium copper
Plating thickness 0.75µm
Flammability rating UL94V-0
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TK62N60W Documents

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