Toshiba 3SK126-Y(TE85L,F) RF MOSFETs Transistors
3SK126-Y(TE85L,F)
2541-368-3SK126-Y(TE85L,F)
RoHS Compliant
Trans RF FET N-CH 15V 0.03A 4-Pin(3 Tab) 2-3J1A T/R
In Stock Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
3SK126-Y(TE85L,F) Tech Specifications
Toshiba 3SK126-Y(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Material | Si | |
| Channel Mode | Depletion | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 15 | |
| Maximum Gate Source Voltage (V) | ±9 | |
| Maximum Continuous Drain Current (A) | 0.03 | |
| Typical Input Capacitance @ Vds (pF) | 4.25@6V | |
| Maximum Power Dissipation (mW) | 150 | |
| Typical Power Gain (dB) | 25 | |
| Minimum Operating Temperature (°C) | -55 | |
| Maximum Operating Temperature (°C) | 125 | |
| Supplier Package | 2-3J1A | |
| Military | No | |
| Mounting | Surface Mount | |
| Package Height | 1.1 | |
| Package Length | 2.9 | |
| Package Width | 1.5 | |
| PCB changed | 3 | |
| Tab | Tab | |
| ECCN (US) | EAR99 | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Pin Count | 4 | |
| Configuration | Single Dual Gate | |
| Channel Type | N | |
| RoHS Status | RoHS Compliant |
3SK126-Y(TE85L,F) Documents
Download datasheets and manufacturer documentation for 3SK126-Y(TE85L,F)
- datasheetstoshiba-3sk126ote85lf-datasheets-9676.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ