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CSD25303W1015 Tech Specifications

Texas Instruments  CSD25303W1015 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3A Tc
Drive Voltage (Max Rds On, Min Rds On) 1.8V 4.5V
Number of Elements 1 Element
Power Dissipation (Max) 1.5W Ta
Turn Off Delay Time 11.3 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Position BOTTOM
Terminal Form BALL
Base Part Number CSD25303
Pin Count 6
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 3.9 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 58m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 4.5V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 20V
Vgs (Max) ±8V
Fall Time (Typ) 7.8 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.092Ohm
Drain to Source Breakdown Voltage -20V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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