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CSD18532Q5B Tech Specifications

Texas Instruments  CSD18532Q5B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 8Pins
Transistor Element Material SILICON
Power Dissipation (Max) 3.2W Ta 156W Tc
Turn Off Delay Time 22 ns
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25℃ 100A Ta
Series NexFET™
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18532
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.2W
Case Connection DRAIN
Turn On Delay Time 5.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5070pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 7.2ns
Vgs (Max) ±20V
Fall Time (Typ) 3.1 ns
Continuous Drain Current (ID) 23A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0043Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 320 mJ
Max Junction Temperature (Tj) 150°C
Width 6mm
Length 5mm
Height 1.05mm
Thickness 950μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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