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CSD18531Q5A Tech Specifications

Texas Instruments  CSD18531Q5A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 10 hours ago)
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A Ta 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3.1W Ta 156W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18531
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 4.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 7.8ns
Vgs (Max) ±20V
Fall Time (Typ) 2.7 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 224 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 1.8 V
Height 1.1mm
Length 4.9mm
Width 6mm
Thickness 1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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CSD18531Q5A Documents

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