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TSM300NB06LDCR RLG Tech Specifications

Taiwan Semiconductor  TSM300NB06LDCR RLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFNU (5x6)
Mfr Taiwan Semiconductor Corporation
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 5A (Ta), 24A (Tc)
Vds - Drain-Source Breakdown Voltage 60 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 40 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Channel Mode Enhancement
Part # Aliases TSM300NB06LDCR
Manufacturer Taiwan Semiconductor
Brand Taiwan Semiconductor
Qg - Gate Charge 9 nC
Rds On - Drain-Source Resistance 30 mOhms
RoHS Details
Id - Continuous Drain Current 24 A
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Technology Si
Number of Channels 2 ChannelChannel
Power - Max 2W (Ta), 40W (Tc)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 30mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 966pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 60V
Product Type MOSFET
FET Feature Logic Level Gate
Product MOSFET
Product Category MOSFET
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