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TSM076NH04DCR RLG Tech Specifications

Taiwan Semiconductor  TSM076NH04DCR RLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFNU (5x6)
Mfr Taiwan Semiconductor Corporation
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 14A (Ta), 34A (Tc)
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 9.9 ns
Vgs th - Gate-Source Threshold Voltage 3.6 V
Pd - Power Dissipation 55.6 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Forward Transconductance - Min 42 S
Channel Mode Enhancement
Part # Aliases TSM076NH04DCR
Manufacturer Taiwan Semiconductor
Brand Taiwan Semiconductor
Qg - Gate Charge 19 nC
Tradename PerFET
Rds On - Drain-Source Resistance 7.6 mOhms
RoHS Details
Typical Turn-Off Delay Time 18.2 ns
Id - Continuous Drain Current 34 A
Operating Temperature -55°C ~ 175°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Technology Si
Number of Channels 2 ChannelChannel
Power - Max 55.6W (Tc)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1217pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 49.3 ns
Drain to Source Voltage (Vdss) 40V
Product Type MOSFET
Transistor Type 2 N-Channel
FET Feature Standard
Product Category MOSFET
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