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TQM110NB04DCR RLG Tech Specifications

Taiwan Semiconductor  TQM110NB04DCR RLG technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFNU (5x6)
Mfr Taiwan Semiconductor Corporation
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 10A (Ta), 50A (Tc)
Base Product Number TQM110
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-On Delay Time 6 ns
Vgs th - Gate-Source Threshold Voltage 3.8 V
Qualification AEC-Q101
Pd - Power Dissipation 2.5 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.013143 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Forward Transconductance - Min 32 S
Channel Mode Enhancement
Part # Aliases TQM110NB04DCR
Manufacturer Taiwan Semiconductor
Brand Taiwan Semiconductor
Qg - Gate Charge 26 nC
Rds On - Drain-Source Resistance 11 mOhms
RoHS Details
Typical Turn-Off Delay Time 16 ns
Id - Continuous Drain Current 10 A
Series Automotive, AEC-Q101
Operating Temperature -55°C ~ 175°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Technology Si
Number of Channels 2 ChannelChannel
Power - Max 2.5W (Ta), 58W (Tc)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1354pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 10 ns
Drain to Source Voltage (Vdss) 40V
Product Type MOSFET
Transistor Type 2 N-Channel
FET Feature Standard
Product Category MOSFET
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