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TSF30H120C Tech Specifications

Taiwan Semiconductor  TSF30H120C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status Production (Last Updated: 2 years ago)
Package / Case Axial
Mounting Type Through Hole
Supplier Device Package Axial
Unit Weight 0.059966 oz
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles Through Hole
RoHS Details
Brand Taiwan Semiconductor
Manufacturer Taiwan Semiconductor
Manufacturer Lifecycle Status ACTIVE (Last Updated: 2 years ago)
Package Tube
Base Product Number TSF30
Mfr Taiwan Semiconductor Corporation
Product Status Active
Current - Average Rectified (Io) (per Diode) 15A
Operating Temperature -55°C ~ 150°C
Series PTF
Packaging Tape & Reel (TR)
Size / Dimension 0.145 Dia x 0.375 L (3.68mm x 9.53mm)
Tolerance ±0.1%
Part Status Active
Number of Terminations 2Terminations
Temperature Coefficient ±15ppm/°C
Resistance 900 kOhms
Composition Metal Film
Power (Watts) 0.25W, 1/4W
Subcategory Diodes & Rectifiers
Technology Si
Failure Rate --
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 150 µA @ 120 V
Power Dissipation 400 mW
Voltage - Forward (Vf) (Max) @ If 880 mV @ 15 A
Max Reverse Leakage Current 150 µA
Operating Temperature - Junction -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max) 120 V
Forward Voltage 880 mV
Product Type Schottky Diodes & Rectifiers
Reverse Recovery Time 25 ns
Max Repetitive Reverse Voltage (Vrrm) 120 V
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 150 A
Max Junction Temperature (Tj) 150 °C
Features Moisture Resistant
Product Category Schottky Diodes & Rectifiers
Height Seated (Max) --
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