STW9N150 Tech Specifications

STMicroelectronics  STW9N150 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 320W Tc
Turn Off Delay Time 86 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Resistance 2.5Ohm
Terminal Finish Tin (Sn)
Base Part Number STW9N
Pin Count 3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 320W
Turn On Delay Time 41 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3255pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 89.3nC @ 10V
Rise Time 14.7ns
Drain to Source Voltage (Vdss) 1500V
Vgs (Max) ±30V
Fall Time (Typ) 52 ns
Continuous Drain Current (ID) 8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 1.5kV
Avalanche Energy Rating (Eas) 720 mJ
Max Junction Temperature (Tj) 150°C
Height 24.45mm
Length 15.75mm
Width 5.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STW9N150 Documents

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