STMicroelectronics STS4DPF30L MOSFETs Transistors Arrays 30V
STS4DPF30L
2381-367-STS4DPF30L
8-SOIC (0.154, 3.90mm Width)
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V,Drain to Source Voltage (Vdss): 30V
In Stock
:
65 Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
STS4DPF30L Tech Specifications
STMicroelectronics STS4DPF30L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 125 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Series | STripFET™ | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 80mOhm | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Voltage - Rated DC | -30V | |
| Max Power Dissipation | 2W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -4A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | STS4D | |
| Pin Count | 8 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Turn On Delay Time | 25 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V | |
| Rise Time | 35ns | |
| Drain to Source Voltage (Vdss) | 30V | |
| Fall Time (Typ) | 35 ns | |
| Continuous Drain Current (ID) | 4A | |
| Threshold Voltage | 1V | |
| Gate to Source Voltage (Vgs) | 16V | |
| Drain Current-Max (Abs) (ID) | 4A | |
| Drain to Source Breakdown Voltage | -30V | |
| Pulsed Drain Current-Max (IDM) | 16A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| Height | 1.25mm | |
| Length | 5mm | |
| Width | 4mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ