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STS4DNF60L Tech Specifications
STMicroelectronics STS4DNF60L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | |
Factory Lead Time | 12 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Weight | 4.535924g | |
Transistor Element Material | SILICON | |
Number of Elements | 2 Elements | |
Turn Off Delay Time | 45 ns | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Cut Tape (CT) | |
Series | STripFET™ | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Resistance | 55mOhm | |
Terminal Finish | Matte Tin (Sn) | |
Additional Feature | LOW THRESHOLD | |
Voltage - Rated DC | 60V | |
Max Power Dissipation | 2W | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Current Rating | 4A | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | STS4D | |
Pin Count | 8 | |
Qualification Status | Not Qualified | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2W | |
Turn On Delay Time | 15 ns | |
FET Type | 2 N-Channel (Dual) | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 55m Ω @ 2A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 1030pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V | |
Rise Time | 28ns | |
Fall Time (Typ) | 10 ns | |
Continuous Drain Current (ID) | 4A | |
Threshold Voltage | 1.7V | |
Gate to Source Voltage (Vgs) | 15V | |
Drain Current-Max (Abs) (ID) | 4A | |
Drain to Source Breakdown Voltage | 60V | |
Pulsed Drain Current-Max (IDM) | 16A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Height | 1.25mm | |
Length | 5mm | |
Width | 4.05mm | |
REACH SVHC | No SVHC | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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