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STL65DN3LLH5 Tech Specifications

STMicroelectronics  STL65DN3LLH5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status OBSOLETE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Memory Types FLASH
Number of Elements 2 Elements
Watchdog Timers Yes
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ V
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 6.5MOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 60W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STL65
Pin Count 8
JESD-30 Code R-PDSO-N6
Interface CAN, I2C, I2S, SPI, UART, USART, USB
Memory Size 768kB
Element Configuration Dual
RAM Size 132kB
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Data Bus Width 32b
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Number of Timers/Counters 14Timers/Counters
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 22V
Core Architecture ARM
Max Frequency 120MHz
Drain Current-Max (Abs) (ID) 19A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 76A
Number of Programmable I/O 114Programmable I/Os
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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STL65DN3LLH5 Documents

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