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STH3N150-2 Tech Specifications

STMicroelectronics  STH3N150-2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 23 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab) Variant
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier H2PAK-2-8159712
Current - Continuous Drain (Id) @ 25℃ 2.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 140W Tc
Turn Off Delay Time 45 ns
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Form GULL WING
Base Part Number STH3N
JESD-30 Code R-PSSO-G2
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9 Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 939pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29.3nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 1500V
Vgs (Max) ±30V
Fall Time (Typ) 61 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 9Ohm
Drain to Source Breakdown Voltage 1.5kV
Avalanche Energy Rating (Eas) 450 mJ
Max Junction Temperature (Tj) 150°C
Height 5mm
Length 10.4mm
Width 15.8mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
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STH3N150-2 Documents

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