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STGW30V60DF Tech Specifications

STMicroelectronics  STGW30V60DF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.35V
Number of Elements 1 Element
Test Conditions 400V, 30A, 10 Ω, 15V
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 258W
Base Part Number STGW30
Element Configuration Single
Power Dissipation 258W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 53 ns
Turn On Time 59 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Turn Off Time-Nom (toff) 225 ns
IGBT Type Trench Field Stop
Gate Charge 163nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 45ns/189ns
Switching Energy 383μJ (on), 233μJ (off)
Height 20.15mm
Length 15.75mm
Width 5.15mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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STGW30V60DF Documents

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