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STGD5NB120SZT4 Tech Specifications

STMicroelectronics  STGD5NB120SZT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3Pins
Weight 3.949996g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 960V, 5A, 1k Ω, 15V
Turn Off Delay Time 12.1 μs
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Voltage - Rated DC 1.2kV
Max Power Dissipation 75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD5
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 55W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 690 ns
Power - Max 75W
Transistor Application POWER CONTROL
Rise Time 170ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 10A
JEDEC-95 Code TO-252AA
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 1.2kV
Turn On Time 850 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Continuous Collector Current 5A
Turn Off Time-Nom (toff) 14100 ns
Td (on/off) @ 25°C 690ns/12.1μs
Switching Energy 2.59mJ (on), 9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 2.4mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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