STMicroelectronics STGB3NB60SDT4 Single IGBTs 600V 6A
STGB3NB60SDT4
2381-372-STGB3NB60SDT4
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Compliant
Max Power Dissipation: 70W,Collector Emitter Voltage (VCEO): 600V,Max Collector Current: 6A
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STGB3NB60SDT4 Tech Specifications
STMicroelectronics STGB3NB60SDT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Number of Elements | 1 Element | |
| Test Conditions | 480V, 3A, 1k Ω, 15V | |
| Operating Temperature | 175°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerMESH™ | |
| JESD-609 Code | e3 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Voltage - Rated DC | 600V | |
| Max Power Dissipation | 70W | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 245 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 3A | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Base Part Number | STGB3 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Power Dissipation | 70W | |
| Input Type | Standard | |
| Transistor Application | MOTOR CONTROL | |
| Rise Time | 150ns | |
| Drain to Source Voltage (Vdss) | 600V | |
| Polarity/Channel Type | N-CHANNEL | |
| Collector Emitter Voltage (VCEO) | 600V | |
| Max Collector Current | 6A | |
| Reverse Recovery Time | 1.7μs | |
| Continuous Drain Current (ID) | 3A | |
| Turn On Time | 275 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A | |
| Turn Off Time-Nom (toff) | 4800 ns | |
| Gate Charge | 18nC | |
| Current - Collector Pulsed (Icm) | 25A | |
| Td (on/off) @ 25°C | 125ns/3.4μs | |
| Switching Energy | 1.15mJ (off) | |
| Gate-Emitter Voltage-Max | 20V | |
| Gate-Emitter Thr Voltage-Max | 5V | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
STGB3NB60SDT4 Documents
Download datasheets and manufacturer documentation for STGB3NB60SDT4
- DatasheetsSTGB3NB60SD
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