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STGB10NC60KDT4 Tech Specifications

STMicroelectronics  STGB10NC60KDT4 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3Pins
Weight 2.240009g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.5V
Number of Elements 1 Element
Test Conditions 390V, 5A, 10 Ω, 15V
Turn Off Delay Time 72 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
Voltage - Rated DC 600V
Max Power Dissipation 65W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB10
Pin Count 3
JESD-30 Code R-PSSO-G2
Element Configuration Single
Power Dissipation 60W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 17 ns
Power - Max 65W
Transistor Application POWER CONTROL
Rise Time 6ns
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Reverse Recovery Time 22 ns
Continuous Drain Current (ID) 10A
Max Breakdown Voltage 600V
Turn On Time 23 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A
Turn Off Time-Nom (toff) 242 ns
Gate Charge 19nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Height 4.6mm
Length 10.4mm
Width 9.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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