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BUL216 Tech Specifications
STMicroelectronics BUL216 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Lifecycle Status | ACTIVE (Last Updated: 7 months ago) | |
Factory Lead Time | 8 Weeks | |
Contact Plating | Tin | |
Mount | Through Hole | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Number of Pins | 3Pins | |
Weight | 90.718474mg | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 800V | |
Number of Elements | 1 Element | |
hFEMin | 12 | |
Operating Temperature | 150°C TJ | |
Packaging | Tube | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Voltage - Rated DC | 800V | |
Max Power Dissipation | 90W | |
Current Rating | 4A | |
Base Part Number | BUL216 | |
Pin Count | 3 | |
Element Configuration | Single | |
Power Dissipation | 90W | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
Collector Emitter Voltage (VCEO) | 800V | |
Max Collector Current | 4A | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 400mA 5V | |
Current - Collector Cutoff (Max) | 250μA | |
JEDEC-95 Code | TO-220AB | |
Vce Saturation (Max) @ Ib, Ic | 3V @ 660mA, 2A | |
Collector Base Voltage (VCBO) | 1.6kV | |
Emitter Base Voltage (VEBO) | 9V | |
VCEsat-Max | 3 V | |
Turn Off Time-Max (toff) | 4020ns | |
Height | 9.15mm | |
Length | 10.4mm | |
Width | 4.6mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
BUL216 Documents
Download datasheets and manufacturer documentation for BUL216
- DatasheetsBUL216 BUL216-STMicroelectronics-datasheet-8552739.pdf BUL216-STMicroelectronics-datasheet-15207039.pdf BUL216-STMicroelectronics-datasheet-65317.pdf BUL216-STMicroelectronics-datasheet-148263.pdf BUL216-STMicroelectronics-datasheet-10314176.pdf BUL216-STMicroelectronics-datasheet-14064929.pdf
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