BD139 Tech Specifications

STMicroelectronics  BD139 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 90.718474mg
Transistor Element Material SILICON
Manufacturer Package Identifier SOT-32-0016114E
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage 500mV
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 80V
Max Power Dissipation 1.25W
Current Rating 1.5A
Base Part Number BD139
Pin Count 3
Element Configuration Single
Power Dissipation 1.25W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
Height 13.2mm
Length 7.8mm
Width 2.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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