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JANTX1N5416 Tech Specifications

Semtech  JANTX1N5416 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case Axial
Surface Mount NO
Supplier Device Package Axial
Diode Element Material SILICON
Number of Terminals 2Terminals
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
HTS 8541.10.00.80
Automotive No
PPAP No
Maximum DC Reverse Voltage (V) 100
Peak Reverse Repetitive Voltage (V) 100
Maximum Continuous Forward Current (A) 4.5
Peak Non-Repetitive Surge Current (A) 150
Peak Forward Voltage (V) 1.1@3A
Peak Reverse Current (uA) 1
Peak Reverse Recovery Time (ns) 150
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Mounting Through Hole
Package Length 4.32(Max)
PCB changed 2
Supplier Package Case G-4
Package Bulk
Mfr Semtech Corporation
Product Status Discontinued at Digi-Key
Package Description O-XALF-W2
Package Style LONG FORM
Package Body Material UNSPECIFIED
Risk Rank 1.84
Forward Voltage-Max (VF) 1.1 V
Ihs Manufacturer SEMTECH CORP
Part Life Cycle Code Active
Number of Elements 1 Element
Manufacturer Semtech Corporation
Package Shape ROUND
Manufacturer Part Number JANTX1N5416
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Series MIL-PRF-19500/411
Part Status Active
Type Switching Diode
Applications FAST SOFT RECOVERY
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position AXIAL
Terminal Form WIRE
Reach Compliance Code unknown
Pin Count 2
Reference Standard MIL-19500
JESD-30 Code O-XALF-W2
Qualification Status Qualified
Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 3 A
Case Connection ISOLATED
Operating Temperature - Junction -
Output Current-Max 4.5 A
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 4.5A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 100 V
Capacitance @ Vr, F 430pF @ 4V, 1MHz
Non-rep Pk Forward Current-Max 150 A
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.15 µs
Reverse Recovery Time (trr) 150 ns
Diameter 4.57(Max)
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