GPA030A135MN-FDR Tech Specifications

SemiQ  GPA030A135MN-FDR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case TO-3
Mounting Type Through Hole
Supplier Device Package TO-3PN
Current-Collector (Ic) (Max) 60A
Test Conditions 600V, 30A, 5Ohm, 15V
Packaging Tube
Operating Temperature -55°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 329W
Reverse Recovery Time 450ns
Voltage - Collector Emitter Breakdown (Max) 1350V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 300nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 30ns/145ns
Switching Energy 4.4mJ (on), 1.18mJ (off)
RoHS Status ROHS3 Compliant
View Similar

GPA030A135MN-FDR Documents

Download datasheets and manufacturer documentation for   GPA030A135MN-FDR

GPA030A135MN-FDR brand manufacturers: SemiQ, Twicea stock, GPA030A135MN-FDR reference price.SemiQ. GPA030A135MN-FDR parameters, GPA030A135MN-FDR Datasheet PDF and pin diagram description download.You can use the GPA030A135MN-FDR Transistors - IGBTs - Single, DSP Datesheet PDF, find GPA030A135MN-FDR pin diagram and circuit diagram and usage method of function,GPA030A135MN-FDR electronics tutorials.You can download from the Twicea.