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GP3D020A065A Tech Specifications

SemiQ  GP3D020A065A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220-2
Mfr SemiQ
Package Tube
Product Status Active
Base Product Number GP3D020
Vr - Reverse Voltage 650 V
Ir - Reverse Current 3 uA
Pd - Power Dissipation 197 W
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles Through Hole
Vrrm - Repetitive Reverse Voltage 650 V
Manufacturer SemiQ
Brand SemiQ
If - Forward Current 20 A
RoHS Details
Ifsm - Forward Surge Current 135 A
Packaging Tube
Subcategory Diodes & Rectifiers
Technology SiC
Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 75 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.65 V @ 30 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 20A
Product Type Schottky Diodes & Rectifiers
Capacitance @ Vr, F 1247pF @ 1V, 1MHz
Product Schottky Silicon Carbide Diodes
Vf - Forward Voltage 1.52 V
Product Category Schottky Diodes & Rectifiers
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