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IRF150 Tech Specifications

Seme LAB  IRF150 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 38 A
Rds On - Drain-Source Resistance 55 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 125 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Unit Weight 0.802306 oz
Factory Pack QuantityFactory Pack Quantity 30
Channel Mode Enhancement
Pd - Power Dissipation 150 W
Series IRF
Configuration Single
Number of Channels 1 ChannelChannel
Transistor Type 1 N-Channel
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