Samsung Semiconductor KSR1206 Single BJT Transistors 50 V 68 0.1 A
KSR1206
2107-365-KSR1206
RoHS Compliant
Collector-Emitter Voltage-Max: 50 V,DC Current Gain-Min (hFE): 68,Collector Current-Max (IC): 0.1 A
In Stock Min. : 1
Mult. : 1
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KSR1206 Tech Specifications
Samsung KSR1206 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-92S | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| ECCN Code | EAR99 | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 4.7 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 68 | |
| Collector-Emitter Voltage-Max | 50 V |
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