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BU508AF Tech Specifications

Samsung  BU508AF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Noal resistance 1 MOhmin
Shaft length L - 20 mm
Wear resistance 15000 cycles
Nominal dissipation power 0.125 W
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
ECCN Code EAR99
Type Variable resistor (potentiometer) series 16K1
HTS Code 8541.29.00.95
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Depth 30 mm
Reach Compliance Code unknown
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Configuration SINGLE
Case Connection ISOLATED
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 34 W
Collector Current-Max (IC) 5 A
DC Current Gain-Min (hFE) 2.25
Collector-Emitter Voltage-Max 700 V
VCEsat-Max 1 V
Power Dissipation Ambient-Max 60 W
Features carbon resistive element, shaft type - KC
Height 24.95 mm
Width 16.9 mm
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BU508AF Documents

Download datasheets and manufacturer documentation for   BU508AF

BU508AF brand manufacturers: Samsung Semiconductor, Twicea stock, BU508AF reference price.Samsung Semiconductor. BU508AF parameters, BU508AF Datasheet PDF and pin diagram description download.You can use the BU508AF Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BU508AF pin diagram and circuit diagram and usage method of function,BU508AF electronics tutorials.You can download from the Twicea.