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RZM002P02T2L Tech Specifications
ROHM Semiconductor RZM002P02T2L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 16 Weeks | |
Contact Plating | Copper, Tin | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SOT-723 | |
Number of Pins | 3Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 200mA Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V 4.5V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 150mW Ta | |
Turn Off Delay Time | 17 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Cut Tape (CT) | |
Published | 2009 | |
JESD-609 Code | e2 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Position | DUAL | |
Terminal Form | FLAT | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Pin Count | 3 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 150mW | |
Turn On Delay Time | 6 ns | |
FET Type | P-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 1.2 Ω @ 200mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 100μA | |
Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V | |
Rise Time | 4ns | |
Drain to Source Voltage (Vdss) | 20V | |
Vgs (Max) | ±10V | |
Fall Time (Typ) | 17 ns | |
Continuous Drain Current (ID) | 200mA | |
Gate to Source Voltage (Vgs) | 10V | |
Drain Current-Max (Abs) (ID) | 0.2A | |
Drain to Source Breakdown Voltage | -20V | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
RZM002P02T2L Documents
Download datasheets and manufacturer documentation for RZM002P02T2L
- DatasheetsRZM002P02
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