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RYC002N05T316 Tech Specifications
ROHM Semiconductor RYC002N05T316 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Factory Lead Time | 16 Weeks | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Surface Mount | YES | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 200mA Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 350mW Tc | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Cut Tape (CT) | |
Published | 2011 | |
JESD-609 Code | e1 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Pin Count | 3 | |
JESD-30 Code | R-PDSO-G3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 2.2 Ω @ 200mA, 4.5V | |
Vgs(th) (Max) @ Id | 800mV @ 1mA | |
Input Capacitance (Ciss) (Max) @ Vds | 26pF @ 10V | |
Drain to Source Voltage (Vdss) | 50V | |
Vgs (Max) | ±8V | |
Continuous Drain Current (ID) | 200mA | |
Drain Current-Max (Abs) (ID) | 0.2A | |
Drain-source On Resistance-Max | 2.8Ohm | |
DS Breakdown Voltage-Min | 50V | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
RYC002N05T316 Documents
Download datasheets and manufacturer documentation for RYC002N05T316
- DatasheetsRYC002N05
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